Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields
We have studied the diffusion coefficient of hot electrons in GaN crystals under moderate electric (1.10 kV/cm) and magnetic (1.4 T) fields.Two configurations, parallel and crossed fields, have been analyzed.The study Serum was carried out for compensated bulk- like GaN samples for various lattice temperatures (30.300 K) and impurity concentrations